Abstract
The paper aims to describe the simulations and measurements performed in order to determine the resistance of source and drain contacts of organic transistors with Polytriarylamine (PTAA) semiconductor. PSpice and MATLAB comparative simulations based on the analytic model are performed. The DC Sweep and parametric simulations are employed to find the electrical characteristics of the transistors, in order obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This technique uses transistor-like structures of various channel lengths, as these have a layout suitable for extracting and assessing the contact resistance. The TLM structures considered are bottom contact bottom gate transistors with interdigitated electrodes of various channel lengths, their geometry assumed to ensure similar values for the drain and source resistances due to the symmetry. This paper approaches the aspects related to the electrical simulation of basic transistor models in comparison to the measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
