Contact printing of horizontally aligned Zn2GeO4and In2Ge2O7nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

Abstract

The ternary oxides, Zn2GeO4 and In2Ge2O7 nanowires, are promising n-type semiconductors with outstanding transport properties for high performance electronic devices. By using the direct contact printing process, we reported the assembly of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays to be used as building blocks for high performance multi-channel field-effect transistors. The as-fabricated multi-channel transistors exhibited higher voltage stability and repeatability than their single nanowire based counterparts. The effective mobilities of the multi-channel field-effect transistors were calculated to be 25.44 cm2 V−1 s−1 and 11.9 cm2 V−1 s−1, comparable to the single-channel FETs. The as-fabricated multi-channel transistors were also used as high performance photodetectors, exhibited a high sensitivity to ultraviolet light illumination with a photoconductive gain and quantum efficiency as high as 1.034 × 105 and 1.032 × 107% for Zn2GeO4 nanowires and 2.58 × 105 and 2.617 × 107% for In2Ge2O7 nanowires.