Abstract
Tetracene single-crystal field-effect transistors (FETs) were fabricated using fresh cleaved tetracene single crystals. In order to obtain a fine contact between the tetracene crystals and the substrate, a stress was applied using an Instron-type machine. Carrier mobility was measured as a function of applied stress and it was observed that 0.5 cm2/(V s) was the highest mobility under the optimum applied stress.
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