Abstract

RF MEMS direct-contact switches exhibit many advantages over the conventional semiconductor switches; however, existing drawbacks such as low power handling, high pull-in voltage and long switch opening time are most critical. This paper presents an optimization design for an RF-MEMS cantilever direct-contact switch to achieve maximum power handling capability, minimum pull-in voltage and switch opening time simultaneously. A 2-step optimization technique is proposed to achieve the optimal design to allow for a power handling capability of 130 mW, a pull-in voltage of 52 V, and a switch opening time 4.4 /spl mu/s presented. The optimization results show that substantial room exists for improving the current designs of RF MEMS direct-contact switches.

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