Abstract
A Statistical Experimental Design Methodology has been applied to contact lithography modelling for GaAs technology. The AZ 4000 resists have been used with three thicknesses 1, 2 and 3 µm. A standard process with UV4 and UV3 exposures and a post exposure bake process with UV4 exposure have been modelled. Two optimisations of the UV4 process leading to vertical profiles and an optimization of the PEB process leading to a lift-off profile are presented.
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