Abstract
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.
Highlights
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts
One contact-related issue is the conductivity mismatch between the ferromagnetic electrode and the graphene, which causes the spins to flow from the graphene into the ferromagnet (“spin absorption”) and results in lower effective spin lifetimes.[9,17]
We analyze a set of graphene spin valves with Ti-seeded MgO barriers and utilize two different models of nonlocal Hanle precession to understand the role of spin absorption
Summary
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers
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