Abstract
GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.
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