Abstract

A configuring vacancy-enriched Mn oxide/sulfide embedded in amorphous carbon layer with highly concentrated vacancies to encapsulate silicon was tentatively explored to overcome the long-term stabilization issues of silicon active center. Our experimental results demonstrate that the configuration of vacancy-enriched Mn3O4-MnS/carbon hybrid coating layer not only functions as a physical separation layer to prevent silicon from direct contact with electrolytes, but also works as an interesting intermediator to facilitate the structure stabilization and the deep utilization of silicon core center. The surface pseudo-capacitive effect dramatically benefits to the modification of the rate performance of silicon. The synthesized Si@Mn3O4-MnS/C anode material maintains a high reversible capacity of 830 mAh/g after undergoing 200 charge–discharge cycles at 200 mA g−1 current density.

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