Abstract

In this work, a P-Sn@G composite is synthesized using a direct high-energy ball milling (HEBM) method with P, Sn, and expanded graphite (EG). The in situ formed few layered graphene (FLG) prevents the formation of Sn4P3 and establishes strong Sn-C and P-C co-bonding in the resultant P-Sn@G composite. Excellent lithium storage is also revealed due to the key effect of FLG to benefit the electronic transfer and buffer expansion stress of the electrode from Sn and P.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call