Construction of optoelectronic memory arrays based on vertical cavity surface emitting lasers and optically controlled electroabsorption modulators

Abstract

Construction of optoelectronic memory arrays with signals optical input-output is the actual problem, because it allows removing from the record-storage- reading process ineffective optical-electronic and electronic-optical conversion. This increases the speed of the memory arrays. Construction of 2-D memory elements, based on optically controlled electroabsorption modulators with a large number of quantum wells using the quantum Stark effect, and vertical cavity surface emitting lasers (VCSEL) arrays is considered. The technology combining optically controlled electroabsorption modulators and VCSEL arrays for production cascades of connected 2-D arrays of memory based on developed optoelectronic asynchronous RS-trigger¹ and optoelectronic synchronous RS-trigger, which allows to create asynchronous and synchronous arrays of optoelectronic memory is suggested. Possibility of 2-D arrays aggregation is done by means of their serial connection due to appropriate organization of interconnections and by increasing the dimensionality via connection of similar 2-D arrays of both vertically and horizontally. Optoelectronic circuit memory cells based on optically controlled electroabsorption modulators and VCSEL arrays with the appropriate organization of interconnections. They can be built on the base of asynchronous RS-trigger and optoelectronic synchronous RS-trigger. The use of VCSEL with coupled cavities as input and output 2-D arrays for optoelectronic memory cascades is considered.