Abstract
Sb-doped p-type ZnTe nanoribbons (NRs) and Ga-doped n-type CdSe NRs were synthesized via a co-thermal evaporation method in a horizontal tube furnace, respectively. Crossbar heterojunction diode (HD) devices were constructed from p-ZnTe:Sb NRs and n-CdSe NRs by a convenient route. The p-ZnTe/n-CdSe NR HD device exhibits a significant rectification characteristic with a rectification ratio up to 103 within ±5 V and a low turn-on voltage of 2.6 V. Photoresponse analysis reveals that such HD devices were highly sensitive to light illumination with excellent stability, reproducibility and fast response speeds of 37/118 μs at reverse bias voltage. It is expected that such HD devices will have great potential applications in electronic and optoelectronic devices in the future.
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