Abstract
CdSe with high densities of coherent polymorphic zincblende/wurtzite (ZB/WZ) interfaces were deposited on TiO2 nanorod arrays (NRAs) by electrodeposition and an optimized annealing process. In situ TEM annealing experiments observed the formation of the ZB/WZ polymorphic junctions that resulted from the change of atomic stacking sequence by dislocation movement induced by stoichiometry changes occurring during annealing. The process deforms CdSe4-tetrahedrons in ZB driving the ZB to WZ phase transition. The formation of ZB/WZ coherent polymorphic junctions enhanced the separation and transport of photo-generated electron-hole pairs in CdSe. The CdSe/TiO2 photoanode produced H2 at a rate of 260.9 μmol cm−2 h-1 under AM 1.5 global sunlight (AM 1.5 G). This is the highest reported value among CdSe-based photoanodes, which indicates the important role of the coherent polymorphic junctions.
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