Abstract

Unreasonable tunnel structure and low intrinsic conductivity limit practical applications of niobium oxide in high-performance supercapacitors. The study reports the construction of Nb9VO25 electrode material via coordination of Nb(V) and V(V) with histidine and serine-functionalized and boron-doped graphene quantum dot (HSBGQD) and subsequent annealing. The introduction of HSBGQD and rambutan peel leads to formation of small Nb9VO25 nanocrystal and low valent Nb and V species. The combination of small size and more reasonable tunnel structure accelerates the ion diffusion. The Nb(IV) and V(IV) double doping optimizes the tunnel structure, narrows the bandgap and creates new pathways for high-speed electron transfer. The integration of defect engineering with graphene surface modification enhance the intrinsic conductivity. The Nb9VO25 electrode shows exceptionally high specific capacitance of 2925.3 F/g, which is more than 142 times that of Nb2O5. The symmetrical supercapacitor with Nb9VO25 electrodes and PVA/Li2SO4 gel electrolyte offers high specific capacitance (263 F/g at 1 A/g), high-rage capacity (138 F/g at 50 A/g), cycling stability (capacitance retention of 99.4 % after 10000-cycle), energy density (146 W h Kg−1 at 996 W Kg−1 and 77 W h Kg−1 at 50181 W kg−1) and broad application prospect in wearable electronic devices.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.