Abstract
A metal-organic monolayer-semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.
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