Abstract
Comprehensive SummaryThe combination of metal oxide and organic semiconductor for constructing organic–inorganic hybrid heterostructure is promising to offer unique optoelectronic properties. However, the distinct difference in electron structure and processing technology of the two types of materials makes it usually difficult to fully deliver their complementary advantages. Herein, we report the construction of a high quality organic/In2O3 hybrid heterostructure presenting a good ambipolar transport with average electron mobility >1 cm2·V–1·s–1 and hole mobility up to 0.4 cm2·V–1·s–1, respectively, together with a high‐gain inverter. In addition, the incorporation with organic film on top of In2O3 remarkably reduces the dark current, enabling the realization of high photoconductivity response with photosensitivity of two magnitudes higher than that of pure In2O3. The photoconductor and phototransistor of the hybrid structure demonstrate high photoresponsivity >103 AW–1 and detectivity up to 1014 Jones, demonstrating the promising functionality of such a high quality hybrid heterostructure.
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