Abstract
Abstract2D/3D‐structured perovskites are promising for high‐performance and stable solar cells due to the passivation ability and hydrophobic character of the large organic cations. However, most of the 2D/3D‐structured perovskites prepared by adding ammonium halides into the precursors or depositing ammonium halides on top of a 3D perovskite film ignore the buried interface which is crucial for the device efficiency and stability. Here, 2D/3D/2D‐structured perovskite films with optimized buried interface are constructed by depositing phenethylammonium bromide (PEABr) on top and 2D perovskite PEA2FA2Pb3Br10 at the bottom of 3D Cs0.07FA0.85MA0.08Pb(I0.95Br0.05)3 perovskite. Thus, a power conversion efficiency (PCE) of 24.2% is achieved due to the minimal nonradiative recombination. The encapsulated device also shows an improved stability, maintaining 93.5% of the initial value after 1000 h under 1 sun equivalent illumination at the maximum power point. This strategy may provide important insights into designing perovskite film structures to achieve high‐performance solar cells with high stability.
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