Abstract
g-C3N4/Cu2O p–n junction composites with different crystal facets were prepared by a simple one-step route, which showed strong facet-dependent photoactivity, where the degradation rate value k for 20% C3N4–Cu2O truncated cubes composites with {100} facets heterojunction was ∼2.5 times higher than that of pure Cu2O truncated cubes. Meanwhile, k value for 20% C3N4–Cu2O octahedra with {111} facets heterojunction exceeds that of pure Cu2O octahedra by a factor of ∼1.9. p–n heterojunctions with type II energy alignment are determined by XPS analysis. Larger band energy offset (0.96 eV for ΔECBO, 1.73 eV for ΔEVBO) was observed in 20% C3N4–Cu2O truncated cubes composites compared with that of 20% C3N4–Cu2O octahedra composites (0.85 eV for ΔECBO, 1.64 eV for ΔEVBO). The bigger band offset means stronger driving force of the electron transfer between Cu2O truncated cubes with {100} facets and C3N4, indicating band alignment of the heterojunction was facet-dependent, the properly larger band offsets between Cu2O...
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