Abstract
g-C3N4/Cu2O p–n junction composites with different crystal facets were prepared by a simple one-step route, which showed strong facet-dependent photoactivity, where the degradation rate value k for 20% C3N4–Cu2O truncated cubes composites with {100} facets heterojunction was ∼2.5 times higher than that of pure Cu2O truncated cubes. Meanwhile, k value for 20% C3N4–Cu2O octahedra with {111} facets heterojunction exceeds that of pure Cu2O octahedra by a factor of ∼1.9. p–n heterojunctions with type II energy alignment are determined by XPS analysis. Larger band energy offset (0.96 eV for ΔECBO, 1.73 eV for ΔEVBO) was observed in 20% C3N4–Cu2O truncated cubes composites compared with that of 20% C3N4–Cu2O octahedra composites (0.85 eV for ΔECBO, 1.64 eV for ΔEVBO). The bigger band offset means stronger driving force of the electron transfer between Cu2O truncated cubes with {100} facets and C3N4, indicating band alignment of the heterojunction was facet-dependent, the properly larger band offsets between Cu2O...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
