Abstract

AbstractThermoelectric materials should be highly efficient and mechanically robust to satisfy the requirements of engineering applications. Herein, an integrated optimization strategy to improve both the thermoelectric performance and mechanical strength of SnTe is proposed. First, grain boundary engineering is applied to SnTe via MgB2 doping. The decomposition of MgB2 results in the Mg‐substituted SnTe solid solution and a special “core–shell” structure of Mg‐B compounds coated SnTe grain remarkably reducing the lattice thermal conductivity. Subsequently, trivalent Sb atoms are introduced to tune the carrier concentration and optimize the electrical performance of the MgB2‐doped sample. Sb‐rich Sn‐Te precipitates inside the grains further diminish the lattice's thermal conductivity. Consequently, a prominent improvement in average ZT of ≈117% is achieved for Sn0.78Sb0.16Te(MgB2)0.09 compared to pristine Sn1.03Te. Moreover, the compressive yield strength and Vickers hardness of Sn0.78Sb0.16Te(MgB2)0.09 are significantly increased by ≈168% and 176% relative to pristine Sn1.03Te, respectively. The quantitative strengthening models including grain boundary, dislocation, solid solution, intergranular, and precipitation strengthening in MgB2‐ and MgB2‐Sb‐doped Sn1.03Te samples are proposed, showing that the dominant strengthening mechanism is precipitation strengthening. This work provides an avenue for designing efficient and robust thermoelectric materials toward commercial application.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call