Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

Abstract

The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). We have studied three groups of devices: commercially available discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTS and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors.