Constant Final-State Photoemission Study of Silicon Fluoride Reaction Layer Created During Etching: Morphology of the Reaction Layer

Abstract

AbstractSoft x-ray core-level photoemission was used to study the reaction layer formed on a Si(111) surface during steady-state etching by XeF2. These surfaces show shifted Si 2p core levels which correspond to particular silicon fluoride species residing in the reaction layer. Spectra were collected in constant final state (CFS) mode for electron kinetic energies ranging from 2 eV to 90 eV. The use of CFS mode allowed the electron escape length to remain constant during individual spectra. The electron escape length for the reaction layer as a function of kinetic energy was then determined by monitoring the intensity of the bulk silicon signal. Thus, by analyzing the proportions of each silicon fluoride species observed in the individual CFS spectra as a function of the electron escape depth in the reaction layer, the distribution of the silicon fluoride species in the layer was obtained. The distribution determined placed SiF at the interface between the reaction layer and the bulk silicon, and the remaining species, SiF2, SiF3 and SiF4, successively layered on top. This observation leads to a model for the structure of the reaction layer.