Abstract
This paper presents a new erasing scheme for flash memories based on a sequence of bulk to gate-box pulses with increasing voltage amplitude. It is experimentally and analytically demonstrated that the erasing dynamics always reaches an equilibrium condition where each pulse induces a constant and controllable injected charge and, therefore, constant threshold shifts. The analytical study allows us to express both the final threshold voltage and the oxide electric field as a function of technological, physical, and electrical parameters. Electrical parameters can be conveniently adapted to control both the threshold voltage and the oxide fields, thus reducing oxide stresses. Advantages with respect to the standard box erasing scheme are theoretically and experimentally demonstrated.
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