Consistent quantitative model for the spatial extent of point defect interactions in silicon

Abstract

The silicon point defect properties which control the spatial extent of their interactions (e.g., interstitial diffusivity) have been calculated by many researchers. However, large discrepancies exist in the reported values of these parameters, and it is essential to have a consistent set of parameters for use in process simulation. To meet this need, we present here a model which includes important interactions which have been ignored in previous analyses, specifically bulk recombination of interstitials with vacancies and segregation of interstitials to surface oxide films. We assess the effectiveness of the model in predicting the spatial extent of point defect interactions by comparing simulation results with a wide range of experimental data. Although this same experimental data previously gave large differences in calculated parameter values, we obtain a single set of model parameters which can account for the full range of data in a consistent manner.