Abstract
Metal Halide Perovskites (MHPs) have been considered as a hot research field for optoelectronic devices such as Perovskite Light Emitting Diodes (PeLEDs), photodetectors, and solar cells. PeLEDs with high quality are required to achieve the final aim of commercialization. Therefore, to commercialize the PeLEDs, perovskite emissive thin films need to be modified through a time-saving economic process. This report provides a practical, unique postprocessing method to appropriately recrystallize the perovskite emissive layer. This method combines 5 min of atmospheric plasma treatment with different annealing low temperatures at a short time (10 min), consuming a short time (totally 15 min), and does not require vacuum equipment. Based on the obtained results, applying these processes reduces the grain size of the MAPbBr3. It also increases the PLQY and, consequently, the carrier recombination rate. Also, based on the Time-resolved photoluminescence (TRPL) results, the average PL lifetime increases from 60.54 ns to 82.3 ns. Therefore, the fabricated devices' luminance and External Quantum Efficiency (EQE) increase to the maximum value of ∼68,500 cd/m2 and ∼20.5%, respectively.
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