Abstract
GaN crystals grown from solution and vapor phase show pronounced facetting. In order to explain the occurrence of the facets, Jackson's α-factor is determined for the III-nitrides under various growth conditions. Jackson's theory confirms that for all growth methods presently used, the α-factor is so large that facetting must occur. For the special case of low-pressure solution growth (LPSG) the α-factor is larger than 6 for a (0 0 0 1) growth surface. By applying published results of density functional theory (DFT) it is shown that an unreconstructed growth interface has to be expected in solution growth techniques. This is also expected for a- or m-plane surfaces of GaN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
