Considerations about the critical thickness for pseudomorphic Si 1- xGe x growth on Si(001)

Abstract

Thin epitaxial Si 1- x Ge x layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si 1- x Ge x layer growth depends on two different mechanisms for strain relief. For low Ge concentrations ( x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.