Consideration of the condensation processes of thin films in the crystal substrate's potential field

Abstract

The condensation process of a single particle in an ideal crystal substrate's potential field is considered. The optimal deposition path and the potential barrier of deposited particle's motion are shown. Some computer modeling examples of thin film's growth process were carried out on the basis of the implemented programs. A fractal analysis of obtained thin films was made, on the basis of which the possibility of estimating the performance of thin film's growth process will be discussed.