Abstract
Although diamond thin films have been mainly produced by chemical vapor deposition methods (CVD) up to now, pulsed laser deposition (PLD) have a potential for growing diamond thin films including no hydrogen at a lower substrate temperature than those of CVD. In the previous study, we could succeed in growing diamond thin film homoepitaxially in an oxygen atmosphere by pulsed laser ablation of graphite. In this report, we investigated structural change of diamond thin film for the substrate temperature and the repetition rate of laser pulses. Based on the result, we considered the growth mechanism of diamond thin film by pulsed laser deposition.
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