Consecutive Selective Chemical Vapor Deposition of Copper and Aluminum from Organometallic Precursors

Abstract

ABSTRACTFor the next generation of integrated microcircuits, there exists a need in the electronics industry for high conductivity, electromigration resistant metallization that can be deposited selectivity by chemical vapor deposition techniques. This paper describes a new process for depositing copper/aluminum metallization selectively onto diffusion barrier surfaces in two consecutive steps. First copper is selectively deposited by OMCVD ontoa patterned diffusion barrier surface using a Cu(I)(hfac)(olefin) precursor. Selective copper deposition onto tungsten or titanium nitride is achieved at 150°C and 100 mtorr. Aluminum is then selectively deposited onto copper using trimethylaminealane as the OMCVDprecursor. Trimethylaminealane gives good selectivity for aluminum deposition onto coppersurfaces over a temperature range of 100–120°C without the use of a surface activating agent. A small amount of copper diffuses into the as deposited aluminum layer atthe low deposition temperature. Complete diffusion of copper into aluminum is achieved by a rapid thermal anneal at a higher temperature. The selectivity of aluminum deposition onto copper surfaces is far superior to that observed for aluminum deposition onto other metal surfaces.