Consecutive CVD of Al ∕ Co Bilayers on SiO2 or Alq3 Surfaces at Low Temperature of 70 ° C

Abstract

There are difficulties in the nucleation of Al on and polymer surfaces at temperatures below using MPA as the Al precursor. In this study, bilayer structures were deposited on or tris-(8-hydroxyquinoline) aluminum surfaces at a low temperature of using a consecutive chemical vapor deposition (CVD) method. The use of as a precursor allowed the deposition of a continuous Co thin film on at , which provided effective nucleation sites for Al CVD at the same temperature. The predeposited Co underlayer was used to promote the nucleation of Al using MPA as the Al precursor. This resulted in the deposition of uniformly thick Al thin films with a smooth surface morphology ( for thick Al), a low resistivity of , and negligible carbon contamination. Compared with the continuous films of Co on , there is isolated growth of Co on surfaces, which resulted in Al thin films with a rough surface (root-mean- for Al), a resistivity of , and 3.0 atom % C contamination.