Abstract
An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of −1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of −1.0 V.
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