Abstract
Properties of Mn+-implanted GaAs have been investigated by means of photoluminescence (PL) spectroscopy and Raman scattering. Mn-related radiative combinations have been observed at λ ≈ 880 nm (1.41 eV) from the samples ([Mn] = 1 × 1017−1 × 1021 cm−3) annealed by a conventional furnace annealing process. Excitation dependence of such emissions indicates that the emissions at λ ≈ 880 nm observed from the samples with [Mn] ≤ 1 × 1019 cm−3 are attributed to the mixture of conduction band to Mn acceptor and residual donor to Mn acceptor pair transitions. The samples with [Mn] = 1 × 1020 and 1 × 1021 cm−3 showed a peak at λ ≈ 880 nm, in addition, an undefined broad emission appeared in the wavelength range near the above mentioned peaks and blue-shifted with increasing excitation power, suggesting that the origin of the radiative recombinations observed at λ ≈ 880 nm may be quite different in the lightly and heavily doped specimens.
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