Abstract
Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a cost-effective and straightforward process capable of minimizing polymers bound to s-SWCNT surfaces acting as an interfering element for the charge carrier transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, we introduced conformal dielectric configuration for s-SWCNT FETs, which are explored by a carefully designed wide array of electrical and chemical characterizations with finite-element analysis (FEA) computer simulation. For more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel dielectrics, demonstrating field-effect mobility of ~8.19 cm2/V⋅s and on/off current ratio of ~105 along with negligible hysteresis.
Highlights
Non-conventional semiconducting channel layers provided by low-dimensional unit structures such as nanotubular networks or quantum dots have emerged as promising candidates for generation electronic applications [1,2,3,4]
It was found that the peak corresponding to P3DDT was substantially decreased with the heat-assisted purification (HAP) process, indicating that a large portion of P3DDT was reduced from the s-single-walled carbon nanotubes (SWCNTs) during the heat treatment
To find an appropriate temperature range, Raman spectroscopy was carried out peak corresponding to P3DDT was substantially decreased with the HAP process, indicating that a large portion of P3DDT was reduced from the s-SWCNTs during the heat treatment
Summary
Non-conventional semiconducting channel layers provided by low-dimensional unit structures such as nanotubular networks or quantum dots have emerged as promising candidates for generation electronic applications [1,2,3,4]. For the specific applications of SWCNTs to semiconducting channels of various electronics, high purity s-SWCNTs should be efficiently and separately collected by an appropriate dispersion of SWCNTs. Recently, as an effective strategy for the functionalization of s-SWCNTs preserving their intrinsic characteristics, non-covalently modified s-SWCNTs with conjugated polymers have remarkably been developed due to their simplicity, high selectivity, and high yield [12,13,14]. As an effective strategy for the functionalization of s-SWCNTs preserving their intrinsic characteristics, non-covalently modified s-SWCNTs with conjugated polymers have remarkably been developed due to their simplicity, high selectivity, and high yield [12,13,14] Such conjugated polymers have been found to efficiently separate s-SWCNT from m-SWCNT, there is still some problematic issues on the electrical performances of the s-SWCNT-based electronics such as limited electric field-induced charge carrier distribution on the semiconductor surface and charge carrying ability between the s-SWCNT nanotubular networks. More investigations for the surface conducting and interfacial behaviors of s-SWCNT FETs corresponding to structural integrity with the semiconducting nanotube networks and dielectric materials are needed to achieve highly conductive and stable s-SWCNT electronic devices
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