Abstract
The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi1 − x/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH4 ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the GexSi1 − x alloy and of the elastic strain ɛ (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and ɛ on the islands’ growth temperature and on the nominal thickness of the deposited Ge layer have been studied.
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