Abstract

Designing of laser diodes needs waveguide parameter optimization and testing. In order to maximize the emitted power of a laser diode an important design parameter is the optical confinement factor (Gamma) of the active region and the reduced confinement factor g equals G/d, where d is the active region thickness. This paper presents a measurement method of the reduced confinement factor by correlating changes in absorption loss with the current density of injected free carriers, for a LPE fabricated double heterostructure single quantum well laser diode with the active region thickness of about 0.1 micrometers . A reduced confinement factor of 8.5 10<SUP>-2</SUP> micrometers <SUP>-1</SUP> and waveguide absorption coefficient of 1.8 cm<SUP>-1</SUP> of the laser diode are reported.

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