Abstract
The effect of quantum confinement on biexcitons in Al0.60Ga0.40N/AlyGa1−yN multiple quantum well (MQW) structures (0.60 < y) was studied. The biexciton binding energy (BM) was evaluated by photoluminescence excitation spectroscopy as a function of well width (LW) and aluminum composition in the barrier layers (y). For MQWs with LW = 1.2 nm, BM increased from 112 to 162 meV as y increased from 0.70 to 0.74. In addition, for MQWs with LW = 1.5 nm, BM increased from 146 to 174 meV as y increased from 0.70 to 0.84. These increases resulted from higher quantum confinement of the biexcitons.
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