Abstract
The exciton and biexciton confinement regimes in strongly anisotropic epitaxial InAs nanostructures called quantum dashes (QDashes) embedded in an In0.53Ga0.23Al0.24As matrix, which is lattice-matched to InP(001) substrate, have been investigated. For that purpose, we have performed low-temperature spatially and polarization-resolved photoluminescence and time-resolved photoluminescence measurements on a set of single QDashes. The main conclusions are drawn based on the experimentally obtained distribution of the ratio between the exciton and biexciton lifetimes. We have found that a majority of QDashes for which the abovementioned ratio falls into the range of 1.2 ± 0.1–1.6 ± 0.1 corresponds to the so called intermediate confinement regime, whereas for several cases, it is close to 1 or 2, suggesting reaching the conditions of weak and strong confinement, respectively. Eventually, we support this data with dependence of the lifetimes' ratio on the biexciton binding energy, implying importance of Coulomb correlations, which change significantly with the confinement regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.