Abstract
A theoretical study of exciton confinement in small CdS and ZnS quantum dots is reported. In our calculational scheme the hole is described by an effective bond-orbital model that accounts for the valence-band degeneracy in bulk semiconductors. The electron is described with a single-band effective-mass approximation. The confining quantum-dot potentials for the hole and electron are modeled as spherically symmetric potential wells with finite barrier heights. The electron-hole Coulomb attraction is included, and exciton energies are obtained variationally in an iterative Hartree scheme. Exciton energies for dot diameters in the range 10--80 \AA{} are calculated and compared with experimental data and other theoretical results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
