Abstract
One of the current questions in Si based thin film applications is how to prepare silicon layers with acceptable crystalline quality on low cost substrates such as glass for thin-film-transistors. We describe an approach of pulsed laser crystallization of an amorphous silicon starting layer with pulse lengths in the range of 10 to 10—4 ns under a transparent confinement layer during laser crystallization. The system is inertially confined and excurses into an extreme state (high temperature/high pressure in the laser-induced molten silicon). As a result one laser pulse of this short time, high temperature–high pressure (HiTP) experiment crystallizes grains of around 1 μm in size with a low density of extended defects.
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