Confinement factor and carrier recombination of InGaAsP/InP quantum well lasers

Abstract

Low-dimensional materials have attracted significant attention in developing and enhancing the performance of quantum well lasers due to their extraordinary unique properties. The optical confinement factor is one of the most effective parameters for evaluating the optimal performance of a semiconductor laser diode when used to measure the optical gain and current threshold. The optical confinement factor and the radiative recombination of single quantum wells (SQW) and multi-quantum wells (MQW) for InGaAsP/InP have been theoretically studied using both radiative and Auger coefficients. Quantum well width, barrier width, and number of quantum wells were all looked at to see how these things changed the optical confinement factor and radiative and non-radiative recombination coefficients for multi-quantum well structures. It was found that the optical confinement factor increases with an increase in the number of wells. The largest value of the optical confinement factor was determined when the number of wells was five at any width. The optical confinement coefficient was 0.23, 0.216, and 0.203 for the number of wells (3, 4, and 5) and well width (27, 19.5, and 15) nm, respectively. In addition, the radiative recombination coefficient increases with the width of the quantum well after 5 nm, and it is much bigger than that of its bulk counterparts.