Abstract
A detailed study of semiconductor–semiconductor heterostructure (SSH) graphene structure, which is combined with the 3m and 3m+1 families AGNRs, is presented in this paper. The research uncovers that the confined state energies of SSH can be modulated continuously between the semiconductor property and the metal property, proved by both the DFT calculation and the Extended Huckel calculation. The results reveal that this tunable energy gap can be attributed to the quantum well localization effect which is induced by the combination of SSH's two different families AGNRs. Furthermore, a brief description of the relationship between SSH's energy gap and Bloch wave of different states is provided. Basing on SSH's tunable energy gap, it is possible to bring a brilliant future for graphene electronic and optical device applications.
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