Abstract
Confined and quasi-confined phonons have been studied in strained Si/Ge superlattices (SLs) with different strain distributions and periods by inelastic light (Raman) scattering. Additional excitations have been found in strained Si/Ge SLs with thin layers (2–6 monolayers) of silicon and germanium. The observed strain effects have been compared with uniaxial stress experiments of bulk silicon and germanium, and the confinement effects have been compared with the phonon branches of bulk silicon and germanium. The additional excitations are assigned to higher-order confined modes and to localized modes caused by SiGe ordering in 〈111〉 direction along the interfaces.
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