Abstract
AbstractThe electron mobility conditioned by confined and interface polar optical phonons for a quasi‐one‐dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low‐field electron mobility in the quantum wire. Taking into account the inelasticity of the electron–polar optical phonon interaction, the electron mobility is derived by a method that was successfully applied in three‐ and quasi‐two‐dimensional cases. The contribution of intersubband transitions to electron mobility for the GaAs quantum wire embedded in the AlxGa1–xAs medium is estimated. The extremums of the mobility dependences on wire radius and Al concentration are obtained. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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