Configurational Effects on Strain and Doping at Graphene-Silver Nanowire Interfaces

Frank Lee,Peter Lynch,Alan B Dalton,Manoj Tripathi

doi:10.3390/app10155157

Abstract

Graphene shows substrate-dependent physical and electronic properties. Here, we presented the interaction between single-layer graphene and silver nanowire (AgNW) in terms of physical straining and doping. We observed a snap-through event for single-layer graphene/AgNW at a separation of AgNWs of 55 nm, beyond the graphene suspended over the nanowires. The adhesion force between the Atomic Force Microscopy (AFM) tip apex and the suspended graphene was measured as higher than the conformed one by 1.8 nN. The presence of AgNW modulates the Fermi energy level of graphene and reduces the work function by 0.25 eV, which results in n-type doping. Consequently, a lateral p-n-p junction is formed with single AgNW. The correlation Raman plot between G-2D modes reveals the increment of strain in graphene of 0.05% due to the curvature around AgNW, and 0.01% when AgNW lies on the top of graphene. These results provide essential information in inspecting the physical and electronic influences from AgNW.

Highlights

IntroductionGraphene has always been a promising material for sensors, supercapacitors, and optoelectronics application by virtue of its high electrical conductivity, optical transmittance, and large surface area [1,2]
Graphene has always been a promising material for sensors, supercapacitors, and optoelectronics application by virtue of its high electrical conductivity, optical transmittance, and large surface area [1,2].In recent years, the incorporation of silver nanowires (AgNWs) into graphene has compelled substantial attention due to the presence of surface plasmon resonance (SPR), which boosts the performance of photovoltaic devices [3], as well as the conductivity enhancement in the graphene-based transparent electrode [4]
The hybrid system of graphene and AgNW can be regarded as textured surface and differentiated into two stacking arrangements: 1) graphene (Gr)/ silver nanowire (AgNW), where graphene covers the individual nanowire and induces strain at the curvature; and 2) AgNW/Gr, where the nanowire lies on the top of the graphene sheet, which generates less strain but some extension of carbon-carbon bond

Summary

Introduction

Graphene has always been a promising material for sensors, supercapacitors, and optoelectronics application by virtue of its high electrical conductivity, optical transmittance, and large surface area [1,2]. The incorporation of silver nanowires (AgNWs) into graphene has compelled substantial attention due to the presence of surface plasmon resonance (SPR), which boosts the performance of photovoltaic devices [3], as well as the conductivity enhancement in the graphene-based transparent electrode [4]. Considering the work function difference between graphene and AgNW, electron (hole) will in general transfer from lower (higher) work function material to higher (lower) work function material [9]. This n-type (p-type) doping creates a p-n junction, which possesses peculiar

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Results

Conclusion