Conference Proceedingon Nanomaterials and Nanochemistry Hard Carbon and Silica based Films Synthesized under Atmospheric Pressure

Abstract

Atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) method using a dielectric barrier discharge (DBD)is a cost-effective process because of no need of vacuum process. In this study, we synthesized silicabased films (SiO:CH) and hydrogenated amorphous carbon films (A-C:H) by AP-PECVD method. We synthesized SiO:CH films from tetramethoxysilane (TMOS) and O2 diluted with N2 and investigated the effect of the substrate temperature and the TMOS flow rate on hardness of the films. The hardness increased from 4.0 to 6.9 GPa as the substrate temperature increased from 80 to 300°C. To synthesize a-C:H films, filamentary DBD (FDBD) was used to improve the hardness compared to the films synthesized by glow DBD (GDBD), which is generally used for APCVD.The hardness of the films increased from 3.7 to 11.9 GPa by using FDBD.