Abstract
The electron mobility limited by electron-polar optical phonon scattering in a quantum well (QW) with and without an inserted thin barrier is considered taking into account the intersubband scattering of confined electrons by all modes of confined and interface phonons. It is shown that the confinement of polar optical phonons strongly affects the electron mobility in the QW. The great contribution to the change of electron mobility yields the resonant intersubband scattering of electrons by interface phonons. The QW width dependence of the mobility for the AlGaAs/GaAs/AlGaAs structure is calculated.
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