Abstract
Acetic anhydride is an essential raw material for manufacturing the drug heroin. Its rapid detection using semiconductor sensors has great significance to curb the spread of drugs. However, there are few reports on the design of semiconductor sensors for acetic anhydride, and the sensing mechanism remains unclear. For this reason, the strategy enhancing the Lewis base sites on the ZnO surface via S-doped is proposed in view of the Lewis acid properties of acetic anhydride combined with Lewis acid base theory. The synthesized S-doped porous spherical ZnO (S-ZnO-600) sensor response (312.4) to 100 ppm acetic anhydride is 4.9 times than ZnO-600 (64.1) with a detection limit of 200 ppb. X-ray photoelectron spectroscopy (XPS), Electron paramagnetic resonance (EPR) and the electron localization function (ELF) indicate that S-doped greatly modulates the electronic structure of ZnO through lattice defects. Meanwhile, the increase of Lewis basicity on the ZnO surface through S doping is further confirmed using CO2 temperature programmed desorption (CO2-TPD), the frontier molecular orbital and the charge density difference (CDD). Gas-phase mass spectrometry (GP-MS) combined with DFT further reveals the catalytic degradation of acetic anhydride sensing process.
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