Abstract
We report an experimental study of the conductivity switching effect in mono and polycrystalline layers of Cd1–xZnxTe grown by MBE on the Si(001)/Au and n+- GaAs(001) substrates. The current-voltage (I-V) characteristics of metal-semiconductor junctions show that the conductivity of the Cd1–xZnxTe structures exhibit two states: high- and low-resistive. Electrical pulses applied to the layers trigger the switching effect between these two states. The coefficient of resistivity switching is of the order of 104 while its reproducibility is repetitive about 100 switching cycles. The bistablity of the conductance in Cd1–xZnxTe layers supports the hypothesis of the ferroelectricity in this material. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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