Abstract
Films of hafnium oxide HfOx with a thickness of about 40 nm were obtained by electron beam sputtering at di erent oxygen ow rates in the chamber. The electrophysical properties of lms in air and vacuum were studied. It is shown that the temperature dependences of lm conductivity, measured in vacuum inthe temperature range from 20 to 180 ◦C, have an activation character with an activation energy of 0.82 ±0.02 eV. It has been suggested that charge transfer in the resulting lms is determined by the activation of electrons into the conduction band from the donor level associated with oxygen vacancies. It was found that the conductivity of lms in air changes greatly with varying oxygen ow, while in vacuum the conductivity is practically independent of the oxygen ow. This indicates signi cant di erences in the surface properties of lms obtained at di erent oxygen ows in the chamber during the deposition process.
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