Abstract

The conductivity of GaMnN layer grown on thick undoped GaN layers analyzed by electrical characterization is reported here. The GaMnN conductivity grown on thick undoped GaN layers were found to be n-type, whereas the GaMnN conductivity on thin undoped GaN is found to be p-type. One possible explanation could be the relaxed strain associated with the increased undoped GaN layer thickness.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call