Abstract
The electrical conductivity of indium oxide films prepared by reactive evaporation of indium is shown to be modulated by adusting the partial pressure of oxygen over the film after its formation. This effect is attributed to changes in the extent of nonstoichiometry of the oxide, which seems to be caused by the incorporation into or extraction of oxygen from the oxide film. The effect is found to be reversible, temperature-dependent, and to become smaller as the film thickness increases.
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